Radiation tolerance of GaAs1-xSbx solar cells

Alloy scattering limitation on the mobility of holes in p-type GaAs1-xSbx

The hole mobilities in the GaAs1-xSbx system is been investigated for 0.0 ≤ x ≤ 1.0. Undoped room temperature mobilities are used to examine the scattering as a function of the Sb content. Two scattering mechanisms are considered: ionised impurity and alloy scattering. The alloy scattering potential is found to be 1.868 eV, which is about twice the theoretical value. Samples of various doping l...

Improved photoresponse of InAs/GaAs quantum dot infrared photodetectors by using GaAs1−xSbx strain reducing layer

Analysis of the modified optical properties and band structure of GaAs1-xSbx-capped InAs/GaAs quantum dots

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Structural and optical properties of InAs/AlAsSb quantum dots with GaAs(Sb) cladding layers

We investigate the effect of GaAs1 xSbx cladding layer composition on the growth and properties of InAs self-assembled quantum dots surrounded by AlAs0.56Sb0.44 barriers. Lowering Sb-content in the GaAs1 xSbx improves the morphology of the InAs quantum dots and reduces cladding layer alloy fluctuations. The result is a dramatic increase in photoluminescence intensity from the InAs quantum dots,...

Forecasting of Solar Radiation

Solar energy is expected to contribute major shares of the future global energy supply. Due to its fluctuating nature an efficient use will require reliable forecast information of its availability in various time and spatial scales depending on the application. The current status of forecasting solar irradiance for energy generation purposes is briefly reviewed with respect to very short-term ...